j. u i/ roaucti, one.. 20 stern ave. springfield. new jersey 07081 usa vn2222km telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 n-channel enhancement mode mospower applications ? switching regulators ? converters ? motor drivers product summary pin 1 - source pin 2 - gate pin 3 & tab - drain to-237 part number VN10KM vn2222km bvdss volts 60 60 rds(on) (ohms) 5 7.5 package to- 237 to- 237 1 2 3 absolute maximum ratings (tc = 25c unless otherwise noted) parameter vds vdgr id@tc = 25 c id@tc = 100 c 'dm vgs pd pd junction to case junction to ambient tj tstg lead temperature drain-source voltage drain-gate voltage (rqs = 1 mn> continuous drain current continuous drain current pulsed drain current1 gate-source voltage max continuous power dissipation max pulse^ power dissipation linear derating factor linear derating factor operating and storage temperature range 11 /1 6" from case for 1 0 sees.} VN10KM 60 60 0.3 0.2 1 + 15, -0.3 1 3.9 0.031 0.008 -55 to +150 300 vn2222km 60 60 0.25 0.16 1 + 15, -0.3 1 3.9 0.031 0.008 -55 to +150 300 units v v a a a v w w/ c w/ c c c 1 pulse test: pulsewidth < 300msec, duty cycle < 2% 2 1 sec continuous power single pulse electrical characteristics (tc - 25 c unless otherwise noted) static parameter b^dss drain-source breakdown voltage ^gs(lh) gate-threshold voltage 'gssf gate-body leakage forward 'oss zero gate voltage drain current 'd(on) on-state drain current^ vds(on) static drain-source on-state voltage1 r0s(on) static drain-source on-state resistance1 rds(on) static drain-source on-state resistance1 type all VN10KM vn2222km all all all all VN10KM vn2222km all VN10KM vn2222km VN10KM vn2222km min. 60 0.8 0.6 0.75 typ. 120 1.5 1.5 1 0.1 1.5 1.2 2 3 6 4 6 7.2 10.8 max. 2.5 2.5 100 10 1.5 2.5 3.75 7.5 5 7.5 9 13.5 units v v na ^a a v v n n n n test conditions vgs = id = 100 ma vds = vgs. id =1 ma vgs = 15v,vds = 0 vds=45v ,vgs=0 vds^2vds(on), vgs = 10v vgs = 5v ,id=-2a vgs = iov ,id = -5a vgs = 5v , id = 0.2a vgs=10v , |d=0.5a vgs =10v. id =-5a. tc =125c vgs=10v, id-0.5a, tc=125rc dynamic gfs forward transductance^ ciss input capacitance coss output capacitance crss reverse transfer capacitance tqjsj turn-on time ime tqff turn-off time time all all all all all all 100 200 40 17 3 7 7 60 25 5 10 10 ms pf pf pf ns ns ns ns vds>2vds(on),id = 0.5a vgs-0 ,vos-25v f - 1 mhz vdd=15v ,|ds 0.6a rg = 25fi , rl = 23n (mosfet switching times are essentially independent of operating temperature.} thermal resistance fithjc junction-to-case rthja junction-to-ambient all all 26 32 125 c/w c/w free air operation body-drain diode ratings and characteristics ig continuous source current (body diodel ism source current' (body diode) vsd diode forward voltage1 VN10KM vn2222km all VN10KM vn2222km -0.85 -0.85 -0.3 -0.25 -1 a a a v v modified mospower symbol showing the integral p-n junction rectifier ? tc=25c, is=-0.3a, vgs = 0 tc=25c, is=-0.25a, vgs = 0 1 pulse test: pulse width < 300 msbc, duty cycle < 2%
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